The mobility edge in amorphous silicon-Reference-Cited by-同舟云学术

The mobility edge in amorphous silicon

Published:1980-04 Issue:4 Volume:41 Page:373-382
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Davies J. H.¹

Affiliation:

1. a Cavendish Laboratory , Madingley Road, Cambridge , CB3 OHE, England

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818008245394

Reference36 articles.

1. Allan , D. Le Comber , P. G. and Spear , W. E. Proceeding of the Seventh International Conference on Amorphous and Liquid Semiconductors. Edited by: Spear , W. E. pp.323CICL: University of Edinburgh:

2. Absence of Diffusion in Certain Random Lattices

3. Brodsky , M. H. Kaplan , D. M. and Ziegler , J. F. Proceedings of the Eleventh International Conference on Physics of Semiconductors. pp.529Warsaw: PWN-Polish Scientific Publishers.

4. Extreme Ultraviolet Transmission of Crystalline and Amorphous Silicon

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4. The mobility edge since 1967;Journal of Physics C: Solid State Physics;1987-07-30

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