The application of the extended pair approximation to hopping conduction in r.f. sputtered amorphous silicon-Reference-Cited by-同舟云学术

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The application of the extended pair approximation to hopping conduction in r.f. sputtered amorphous silicon

Published:1988-08 Issue:2 Volume:58 Page:153-169
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Long A. R.¹,Mcmillan J.¹,Balkan N.¹²,Summerfield S.³

Affiliation:

1. a Department of Physics and Astronomy , University of Glasgow , Glasgow G12 SQQ, Scotland

2. c Department of Physics , University of Essex Wivenhoe Park , Colchester , Essex , England

3. b Department of Engineering , Warwick University , Coventry CV4 IAL, England

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818808208478

Reference33 articles.

1. Hopping Conductivity in Disordered Systems

2. Polarons in crystalline and non-crystalline materials

3. Analysis of frequency-dependent loss data in amorphous silicon and germanium

4. Electrical conduction in evaporated amorphous silicon films

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