Sub-band-gap surface photovoltage in Si/SiO2structures with quasi-continuously distributed interface traps and a deep. In level in the semiconductor bulk
Author:
Affiliation:
1. a Department of Solid State Physics , Sofia University , 5 A. Ivanov Boulevard, BG-1126 , Sofia , Bulgaria
2. b Institute of Mine Building , SC ‘Minstroi’, 23 Ch. Kabakchiev Boulevard, BG-1205 , Sofia , Bulgaria
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818808208487
Reference20 articles.
1. Photoconductivity Associated with Indium Acceptors in Silicon
2. Blumenstock , K. and Shultz , M. Proceedings of the Second Conference, INFOS'81, Erlangen. Edited by: Shultz , M. and Pensl , G. pp.48Berlin: Springer.
3. An improved apparatus for surface photovoltage studies with a bimorphous piezoelectric Kelvin probe
4. Sub-bandgap surface photovoltage in deep bulk impurity level semiconductors
5. Generation of Oxide Charge and Interface States by Ionizing Radiation and by Tunnel Injection Experiments
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Surface photovoltage phenomena: theory, experiment, and applications;Surface Science Reports;1999-12
2. Spectral Behavior of Zero‐Bias Photocurrent at Low Temperature in Bulk Semi‐Insulating GaAs : Cr;Journal of The Electrochemical Society;1994-09-01
3. Highly sensitive automated setup for measuring surface photovoltage spectra;Review of Scientific Instruments;1989-04
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