Deep electron level calculations for dislocations in Si and Ge recursion approach exploiting the translational symmetry
Author:
Affiliation:
1. a Institut für Metallphysik der Universität Göttingen , Sonderforschungsbereich 126, D-3400 , Göttingen , F. R. Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818408246525
Reference34 articles.
1. MODELS OF THE DISLOCATION STRUCTURE
2. Theory of the silicon vacancy: An Anderson negative-Usystem
3. Electron and Phonon Bound States and Scattering Resonances for Extended Defects in Crystals
4. 30° Partial Dislocations in Silicon: Absence of Electrically Active States
5. Dissociation of near-screw dislocations in germanium and silicon
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