A model of trap-controlled recombination in disordered materials
Author:
Affiliation:
1. a Moscow Engineering Physics Institute , Kashirskoe shosse, Moscow , 115409 , U.S.S.R.
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818308228566
Reference13 articles.
1. An Analysis of the Dispersive Charge Transport in Vitreous 0.55 As2S3: 0.45 Sb2S3
2. Grigorovici , R. , ed. 1982. Amorphous Semiconductors, 223Bucharest: Central Institute of Physics. (in Russian)Abstracts and Proceedings Vol. 3P.
3. On the study of amorphous material band structure by current injection
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