Explanation of the laser-induced oscillatory phenomenon in amorphous semiconductor films
Author:
Affiliation:
1. a Central Research Institute of Physics , Budapest , Hungary
2. c Department of Electrical Engineering , University of Edinburgh , Scotland
3. b Department of Electrical Engineering , University of Edinburgh , Scotland
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818308246484
Reference15 articles.
1. Optical bistability and related devices
2. A model of photostructural changes in chalcogenide vitreous semiconductors: 2. Experimental results
3. Laser-induced phase transition in amorphous GeSe2 films
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5. Reversible quasicrystallization in GeSe2glass
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