Comparison of the structural properties of a-Si:H prepared from SiH4 and SiH4 + H2 plasmas, and correlation of the structure with the photoelectronic properties
Author:
Affiliation:
1. a Gordon McKay Laboratory , Harvard University , Cambridge , Massachusetts , 02138 , U.S.A.
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818908205927
Reference15 articles.
1. Beyer , W. Wagner , H. and Fingers , F. 1985. Proceedings of the 11th International Conference on Amorphous and Liquid Semiconductors, Edited by: Evangelisti , F. and Stuke , J. 857Amsterdam: North-Holland.
2. Hydrogen evolution and defect creation in amorphous Si: H alloys
3. Hydrogen content and density of plasma‐deposited amorphous silicon‐hydrogen
4. Recent advances in amorphous silicon solar cells and their technologies
5. Effects of inert gas dilution of silane on plasma‐deposited a‐Si:H films
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