Anomalous bonding in SiO2 at the SiO2–Si interface-Reference-Cited by-同舟云学术

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Anomalous bonding in SiO2 at the SiO2–Si interface

Published:1987-06 Issue:6 Volume:55 Page:735-746
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Hollinger G.¹²,Bergignat E.¹,Chermette H.¹,Himpsel F.³,Lohez D.⁴,Lannoo M.⁴,Bensoussan M.⁵

Affiliation:

1. a Institut de Physique Nucléaire (et IN2P3), Université Claude Bernard Lyon-1 , 69622 , Villeurbanne , Cedex , France

2. e Laboratoire; Electronique , Ecole Centrale de Lyon, 69131 , Ecully , France

3. b IBM T. J. Watson Research Center , Box 218, Yorktown Heights , New York , 10598 , U.S.A.

4. c Laboratoire de Physique des Solides , ISEN , 39 boulevard Vauban, 59046 , Lille , Cedex , France

5. d Centre National;Etudes des Télécommunications , 196 rue de Paris, 92220 , Bagneux , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818708218377

Reference31 articles.

1. Trends in the band structure of defect tetrahedral compound semiconductors : oxides and other systems with 4-2 local coordination

2. Thèse de Spécialité;Bergignat E.,1984

3. Local order as determined by electronic and vibrational spectroscopy: Amorphous semiconductors

4. Electron states inα-quartz: A self-consistent pseudopotential calculation

5. Electronic states at the silicon-silicon dioxide interface

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1. Switching Enhancement via a Back-Channel Phase-Controlling Layer for p-Type Copper Oxide Thin-Film Transistors;ACS Applied Materials & Interfaces;2020-05-11

2. Silica on Silicon Carbide;Critical Reviews in Solid State and Materials Sciences;2008-02-13

3. Direct Observation of Valence and Conduction States near the SiO2/Si(100) Interface;e-Journal of Surface Science and Nanotechnology;2008

4. Photoelectron spectroscopy studies of SiO2/Si interfaces;Progress in Surface Science;2007

5. Effects of interface roughness on the local valence electronic structure at the SiO2/Si interface: Soft X-ray absorption and emission study;Journal de Physique IV (Proceedings);2006-03

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