Investigation of the occupation function of localized states in a-Si: H under infrared stimulated photoexcitation-Reference-Cited by-同舟云学术

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Investigation of the occupation function of localized states in a-Si: H under infrared stimulated photoexcitation

Published:1988-12 Issue:6 Volume:58 Page:655-662
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Gu Benyuan¹²,Qiao Jianmin¹³,Dong Bizhen⁴

Affiliation:

1. a Dipartimento di Fisica , Università ‘La Sapienza’ , 00185 , Roma , Italy

2. c Institute of Physics, Academia Sinica , P.O. Box 603, Beijing , P.R. China

3. d Department of Materials Science and Engineering , Zhejiang University , Hangzhou , P.R. China

4. b Institute of Physics, Academia Sinica , P.O. Box 603, Beijing , P. R. China

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818808211464

Reference8 articles.

1. Infrared quenching of photoluminescence and photoconductivity in a-Si:H

2. Recombination of trapped carriers in a-Si:H probed by subbandgap excitation

3. Optical Quenching of Photoconductivity in a-Si: H Films

4. Dual-beam photoconductivity modulation spectroscopy in a-Si: H

5. Vanier , P. E. 1984. Semiconductors and Semimetals, Edited by: Pankove , J. Vol. 21B, 329New York: Academic Press.

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