Shallow traps and the D−centre in Ge: Sb far-infrared photoconductivity studies below 1 K
Author:
Affiliation:
1. a Laboratory of Atomic and Solid State Physics and the Materials Science Center , Cornell University , Ithaca , New York , 14853 , U.S.A.
2. b Department of Physics , Syracuse University , Syracuse, N.Y. 13210, U.S.A.
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818208246389
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2. Far-infrared spectroscopic identification of D-states in GaAs, InP and InSb;Semiconductor Science and Technology;1989-06-01
3. Positively Charged Acceptors with (ls)3 and (ls)4 Configurations;Proceedings of the 17th International Conference on the Physics of Semiconductors;1985
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