Influence of carbon incorporation in amorphous hydrogenated silicon-Reference-Cited by-同舟云学术

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Influence of carbon incorporation in amorphous hydrogenated silicon

Published:1985-06 Issue:6 Volume:51 Page:581-589
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Schmidt M. P.¹²,Bullot J.¹,Gauthier M.¹,Cordier P.¹,Solomon I.³,Tran-Quoc H.³

Affiliation:

1. a Groupe des Matériaux Amorphes, Laboratoire de Physico-Chimie des Rayonnements, Bâtiment 490, Université Paris-Sud , 91405 , Orsay , France

2. b Laboratiore PMC , Ecole Polytechnique , 91228 , Palaiseau , France

3. c Laboratoire de Physique de la Matière Condensée , Ecole Polytechnique , 91228 , Palaiseau , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818508243149

Reference19 articles.

1. Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge technique

2. Benferhat , R. 1983. Paris: Thèse de Troisième Cycle.

3. Disorder and density of defects in hydrogenated amorphous silicon-carbon

4. Electronic and optical properties of glow-discharge amorphous silicon-carbon alloys

5. Catherine , Y. 1981. Thèse de Doctorat d'Etat, Nantes.

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1. Calculation of the densities of states of a-Si1−yCy(:H) alloys and comparison with measured X-ray spectra;Journal of Non-Crystalline Solids;2000-01

2. Optoelectronic properties of p-type layers for amorphous-silicon solar cells prepared using helium dilution;Solar Energy Materials and Solar Cells;1999-02

3. Native and Light Induced Defect States in Wide Band Gap Hydrogenated Amorphous Silicon-Carbon(a-Si1-X Cx :H) Alloy Thin Films;Diamond Based Composites;1997

4. Space‐charge‐limited currents in amorphous semiconductors with correlated defects;Journal of Applied Physics;1996-06

5. Optimization of a-Si1−xCx: H films prepared by ultrahigh vacuum plasma enhanced chemical vapour deposition for electroluminescent devices;Thin Solid Films;1994-04

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