Controlling the morphology of solution-processed CuIn(SSe)2 absorber layers by film thickness and annealing temperature-Reference-Cited by-同舟云学术

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Controlling the morphology of solution-processed CuIn(SSe)2 absorber layers by film thickness and annealing temperature

Published:2020-08-12 Issue:1 Volume:707 Page:126-139
ISSN:1542-1406
Container-title:Molecular Crystals and Liquid Crystals
language:en
Short-container-title:Molecular Crystals and Liquid Crystals

Author:

Do Quyen¹,Manh Nguyen The¹,Triet Luong Nguyen Dai¹,Choi Yura¹,Lee Young-Woo¹,Cho Yonghyun¹,Lee Kwang Jae²,Cho Namchul¹

Affiliation:

1. Department of Energy Systems Engineering, Soonchunhyang University, Asan, Chungcheongnam-do, Republic of Korea;

2. Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://www.tandfonline.com/doi/pdf/10.1080/15421406.2020.1743464

Reference44 articles.

1. Copper Indium Selenides and Related Materials for Photovoltaic Devices

2. Ternary and quaternary metal chalcogenide nanocrystals: synthesis, properties and applications

3. Dimensional Reduction: A Practical Formalism for Manipulating Solid Structures

4. Effects of heavy alkali elements in Cu(In,Ga)Se 2 solar cells with efficiencies up to 22.6%

5. N. Romeo et al., CIGS thin films prepared by sputtering and selenization by using In2Se3, Ga2Se3 and Cu as sputtering targets. 35th IEEE Photovoltaic Specialists Conference, Honolulu, HI, 2010, pp. 000786-000788 (2010).

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1. Cu(In,Ga)Se2:Te Thin Films for Stoichiometric Compensation by Using Co-Sputtering and Rapid Thermal Annealing;Applied Sciences;2023-03-28

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