Capacitance Parameter Extraction and Modeling for Amorphous Silicon Thin-Film Transistors-Reference-Cited by-同舟云学术

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Capacitance Parameter Extraction and Modeling for Amorphous Silicon Thin-Film Transistors

Published:2011-10-18 Issue:1 Volume:550 Page:66-75
ISSN:1542-1406
Container-title:Molecular Crystals and Liquid Crystals
language:en
Short-container-title:Molecular Crystals and Liquid Crystals

Author:

Han Sang-Kug¹,Choi Hoon¹,Moon Kyo-Ho¹,Choi Young-Seok¹,Ryu Sang-Hyuk²,Choi Sie-Young³

Affiliation:

1. a Panel Department , LG Display Company Ltd. , 1007, Deogeun-ri Wollong-myeon, Paju-si , Gyeonggi-do , 413-811 , Korea

2. b Department of Electronics Engineering , Daegu University , Gyeongbuk , 712-714 , Korea

3. c School of Electronic and Electrical Engineering, Kyungpook National University , Korea

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://www.tandfonline.com/doi/pdf/10.1080/15421406.2011.600217

Reference5 articles.

1. Physics of amorphous silicon based alloy field‐effect transistors

2. SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors

3. A new analytic model for amorphous silicon thin‐film transistors

4. Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors

5. Electronic states at the hydrogenated amorphous silicon/silcon nitride interface

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