Influence of Phosphorus Doping in the Active Layer with Deposition Time and Gas Flow Rate in a-Si:H Thin Film Transistor
Author:
Affiliation:
1. a Department of Sensor and Display Engineering , Kyungpook National University , Daegu , 702-701 , Korea
2. b Department of Electronics Engineering , Kyungpook National University , Daegu , 702-701 , Korea
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://www.tandfonline.com/doi/pdf/10.1080/15421406.2011.600590
Reference6 articles.
1. Application of amorphous silicon field effect transistors in addressable liquid crystal display panels
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3. LeContellec , M. Morin , F. Richard , J. Coissard , P. Morel , M. and Bonnel , M. 1982. SID 82 Digest 44–45.
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