On the mechanism of doping and defect formation in a-Si: H
Author:
Affiliation:
1. a Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften Universitat , Marburg , , Renthof 5, F.R. Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418639108224434
Reference40 articles.
1. Structure and Electronic States in Disordered Systems
2. Theories of defects in amorphous semiconductors
3. Interstitial doping of amorphous silicon
4. Fermi energy dependence of surface desorption and diffusion of hydrogen in a-Si:H
5. Dangling bonds in doped amorphous silicon: Equilibrium, relaxation, and transition energies
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