Free-carrier absorption in microcrystalline silicon thin films prepared by very-high-frequency glow discharge-Reference-Cited by-同舟云学术

Free-carrier absorption in microcrystalline silicon thin films prepared by very-high-frequency glow discharge

Published:1994-02 Issue:2 Volume:69 Page:197-207
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Peter K.¹,Willeke G.¹,Prasad K.²,Shah A.²,Bucher E.¹

Affiliation:

1. a Universität Konstanz, Fakultät für Physik , W-78434, Konstanz , Germany

2. b Université de Neuchǎtel, Institut de Microtechnique , CH-2000, Neuchǎtel , Switzerland

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639408240103

Reference16 articles.

1. Optical Properties of Semiconductors. III. Infra-Red Transmission of Silicon

2. Bronstein , I. N. and Semendjajew , K. A. 1987. Tasschenhuch der Mathematik, 23. Auflage, 747Zurich: Harri Deutsch.

3. Dubois , J. M. Willeke , G. Prasad , K. Blenk , O. Shah , A. and Bucher , E. Proceedings of the 11 th Commission of the European Communities Conference on Photovoltaic Solar Energy. pp.718Dordrecht: Kluwer.

4. Some new results on transport and density of state distribution in glow discharge microcrystalline silicon

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