Capacitance anomaly near the metal—non-metal transition in Cr—hydrogenated amorphous Si—V thin-film devices-Reference-Cited by-同舟云学术

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Capacitance anomaly near the metal—non-metal transition in Cr—hydrogenated amorphous Si—V thin-film devices

Published:1996-07 Issue:1 Volume:74 Page:37-50
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Hu J.¹,Hajto J.²,Snell A. J.¹,Owen A. E.¹,Rose M. J.³

Affiliation:

1. a Department of Electrical Engineering , University of Edinburgh , Edinburgh , EH9 3JL , Scotland

2. b Department of Applied Chemical and Physical Sciences , Napier University , Edinburgh , EH 14 1DJ , Scotland

3. c Department of Applied Physics and Electronics & Mechanical Engineering , University of Dundee , Dundee , DD1 4HN , Scotland

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639608240326

Reference17 articles.

1. Critical Behavior of the Complex Dielectric Constant near the Percolation Threshold of a Heterogeneous Material

2. A package for impedance/admittance data analysis

3. Percolation threshold and conductivity in metal-insulator composite mean-field theories

4. Percolation and anomalous conduction on fractals in fluid-saturated porous media

5. Dielectric Anomaly and the Metal-Insulator Transition inn-Type Silicon

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Conduction through a SiO2 layer studied by electrochemical impedance analysis;Electrochemistry Communications;2017-03

2. Diffusion of chromium in thin hydrogenated amorphous silicon films;Semiconductors;2004-03

3. Field-induced anomalous changes in Cr/a-Si:H/V thin film structures;Thin Solid Films;2001-09

4. AC characteristics of Cr/p/sup +/a-Si:H/V analog switching devices;IEEE Transactions on Electron Devices;2000

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