Defect creation in hydrogenated amorphous silicon films induced by vacuum ultraviolet light from synchrotron and undulator radiation
Author:
Affiliation:
1. a Department of Electrical Engineering and Electronics, Faculty of Engineering , Seikei University , Musashino , 180 , Japan
2. b Department of Electrical and Electronic Engineering , Toyohashi University of Technology , Toyohashi , 441 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418639408240201
Reference22 articles.
1. Evidence for a stretched‐exponential description of optical defect generation in hydrogenated amorphous silicon
2. Cody , G. D. 1984. Semiconductor and Semimetals, Edited by: Pankove , J. I. Vol. 21, 23Academic. Part B
3. Kinetics of light induced metastable defect creation in amorphous silicon: A dispersive excitonic model for the weak bond‐dangling bond conversion
4. Silicon (Si)
5. Emission of photons by undulators
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1. Radiation Effects and Annealing Studies on Amorphous Silicon Solar Cells;IEEE Transactions on Nuclear Science;2009-12
2. Recrystallization of Arsenic Implanted Layer in Silicon by Vacuum-Ultraviolet-Light Irradiation;Japanese Journal of Applied Physics;1996-12-15
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