Theoretical studies of the low-temperature drift mobility in a-Si: H-Reference-Cited by-同舟云学术

Theoretical studies of the low-temperature drift mobility in a-Si: H

Published:1991-01 Issue:1 Volume:63 Page:193-200
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Heuckeroth V.¹,Overhof H.²,Schumacher R.¹,Thomas P.¹

Affiliation:

1. a Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften , Philipps Universität Marburg , Renthof 5, D-3550 , Marburg , F.R. Germany

2. b Fachbereich Physik , Universität-Gesamthochschule Paderborn , D-4790 , Paderborn , F.R. Germany

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639108224440

Reference15 articles.

1. Some aspects of impurity conduction

2. Low-temperature electron transport near the mobility edge of amorphous silicon

3. An elementary approach towards the Anderson transition

4. Heuckeroth , V. 1990. Marburg: Diploma Thesis.

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