Microstructure and electrical response of thin SiC films on Si substrates of p- and n-types-Reference-Cited by-同舟云学术

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Microstructure and electrical response of thin SiC films on Si substrates of p- and n-types

Published:2019-04-04 Issue:1 Volume:542 Page:52-57
ISSN:0015-0193
Container-title:Ferroelectrics
language:en
Short-container-title:Ferroelectrics

Author:

Sergeeva O. N.¹,Solnyshkin A. V.¹,Nekrasova G. M.²,Senkevich S. V.³,Pronin I. P.³,Kukushkin S. A.⁴

Affiliation:

1. Department of Condensed Matter Physics, Tver State University, Tver, Russia;

2. Tver State Agricultural Academy, Tver, Russia;

3. Ioffe Institute, St. Petersburg, Russia;

4. Institute of Problems of Mechanical Engineering RAS, St. Petersburg, Russia

Funder

Ministry for Education and Science of Russian Federation

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/00150193.2019.1574662

Reference11 articles.

1. Zinc Oxide

2. Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates

3. Epitaxial gallium oxide on a SiC/Si substrate

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC/Si as a New Platform for Growth of Wide-Bandgap Semiconductors;Mechanics and Control of Solids and Structures;2022

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