Modeling of 1S-1R crossbar array with Ti-doped VO <sub>2</sub> -based selector device-Reference-Cited by-同舟云学术

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Modeling of 1S-1R crossbar array with Ti-doped VO ₂ -based selector device

Published:2024-02-13 Issue:3 Volume:618 Page:872-888
ISSN:0015-0193
Container-title:Ferroelectrics
language:en
Short-container-title:Ferroelectrics

Author:

Dilna U.¹,Prasad S. N.¹²

Affiliation:

1. School of Electronics and Communication Engineering, REVA University, Bangalore, Karnataka, India

2. Department of Electrical and Electronics Engineering, Manipal Institute of Technology Bengaluru, Manipal Academy of Higher Education (MAHE), Manipal, Karnataka, India

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/00150193.2023.2296310

Reference21 articles.

1. Ta2O5-y-based ReRAM device with annealing-free Ag:ZrNx-based bilayer selector device

2. Improved multi-level storage performance by insulator-metal transition of In2S3-doped Ge2Sb2Te5 films

3. Insights to the influences of electroforming process on resistive switching types in Pt/InGaZnO/W memory device

4. Understanding of the Abrupt Resistive Transition in Different Types of Threshold Switching Devices From Materials Perspective

5. Selector devices for emerging memories

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