Effect of growth condition on the electrical behavior of BiFeO<sub>3</sub>/Si thin film devices-Reference-Cited by-同舟云学术

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Effect of growth condition on the electrical behavior of BiFeO₃/Si thin film devices

Published:2022-10-26 Issue:1 Volume:599 Page:172-179
ISSN:0015-0193
Container-title:Ferroelectrics
language:en
Short-container-title:Ferroelectrics

Author:

Panchasara Akshay¹,Jethva Sadaf²,Savaliya Chirag²,Jose P. Josely³,Keshvani M. J.³⁴,Jivani Mahesh N.¹,Ravalia Ashish²

Affiliation:

1. Department of Electronics, Saurashtra University, Rajkot, India

2. Department of Nanoscience and Advanced Materials, Saurashtra University, Rajkot, India

3. Department of Physics, Marwadi University, Rajkot, India

4. The Patidar Gin Science College, Bardoli, India

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/00150193.2022.2113650

Reference20 articles.

1. Multiferroics: a magnetic twist for ferroelectricity

2. Large Electric Polarization and Exchange Bias in Multiferroic BiFeO3

3. Magnetic control of ferroelectric polarization

4. Tailoring surface phase transition and magnetic behaviors in BiFeO3 via doping engineering

5. Dependence of the Thermal Conductivity of BiFeO3 Thin Films on Polarization and Structure

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Oxygen Pressure on the Microstructures and Nanomechanical Properties of Samarium-Doped BiFeO3 Thin Films;Micromachines;2023-09-29

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