Reduction of leakage current and large enhancement of ferroelectric properties in Sb doped Bi4Ti3O12 ferroelectric thin film with Sb doped Bi2Ti2O7 as buffer layer-Reference-Cited by-同舟云学术

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Reduction of leakage current and large enhancement of ferroelectric properties in Sb doped Bi₄Ti₃O₁₂ ferroelectric thin film with Sb doped Bi₂Ti₂O₇ as buffer layer

Published:2023-01-02 Issue:1 Volume:602 Page:71-83
ISSN:0015-0193
Container-title:Ferroelectrics
language:en
Short-container-title:Ferroelectrics

Author:

Wang Zan¹,Xu Man¹,Zhang Dan²,Wang Lei¹,Zhang Wen-zheng²

Affiliation:

1. Analysis and Test Center, Shenyang University of Chemical Technology, Shenyang, China

2. School of Materials and Science Engineering, Shenyang University of Chemical Technology, Shenyang, China.

Funder

Liaoning Provincial Department of Education

Fund of Science and Technology Bureau, Liaoning Province

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/00150193.2022.2149303

Reference26 articles.

1. Ferroionic states in ferroelectric thin films

2. Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition

3. Domain Wall Architecture in Tetragonal Ferroelectric Thin Films

4. Enhanced Electrical Resistivity and Properties via Ion Bombardment of Ferroelectric Thin Films

5. Large Elasto-Optic Effect in EpitaxialPbTiO3Films

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