Effect of annealing temperature on crystalline structure and domains configuration of BiFeO3films
Author:
Affiliation:
1. School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, Chongqing, China;
2. Chongqing Key Laboratory of Nano-Micro Composite Materials and Devices, Chongqing, China
Funder
University of Chongqing
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/00150193.2018.1528935
Reference27 articles.
1. Application of BiFeO3 and Bi4Ti3O12 in ferroelectric memory, phase shifters of a phased array, and microwave HEMTs
2. Temperature-dependent current conduction of metal-ferroelectric (BiFeO3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications
3. High-Frequency Electromechanical Imaging of Ferroelectrics in a Liquid Environment
4. Properties of ferroelectric/ferromagnetic thin film heterostructures
5. Optoelectronic and Ferroelectric Properties of Cerium-Doped (Na0.5Bi0.5)(Ti0.99Fe0.01)O3 Nanocrystalline Films on (111) Pt/TiO2/SiO2/Si: A Composition-Dependent Study
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