Physicochemical Characterization of Annealed PolySi/NIDOS/SiO2 Structures-Reference-Cited by-同舟云学术

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Physicochemical Characterization of Annealed PolySi/NIDOS/SiO2 Structures

Published:2009-03-24 Issue:3 Volume:42 Page:167-170
ISSN:0038-7010
Container-title:Spectroscopy Letters
language:en
Short-container-title:Spectroscopy Letters

Author:

Mahamdi R.¹²,Saci L.¹,Mansour F.¹,Temple-Boyer P.³,Scheid E.³,Jalabert L.³⁴

Affiliation:

1. a LEMEA MED Laboratory, Department of Electronics , University Mentouri , Constantine, Algeria

2. b Department of Electronics , University Hadj Lakhdar , Batna, Algeria

3. c LAAS-CNRS, Université de Toulouse , Toulouse, France

4. d LIMMS-CNRS/IIS-The University of Tokyo , Tokyo, Japan

Publisher

Informa UK Limited

Subject

Spectroscopy,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Link

https://www.tandfonline.com/doi/pdf/10.1080/00387010902772401

Reference23 articles.

1. A comprehensive study on p/sup +/ polysilicon-gate MOSFET's instability with fluorine incorporation

2. Boron Diffusion and Activation during Heat Treatment in Heavily Doped Polysilicon Thin Films for P+Metal-Oxide-Semiconductor Transistors Gates

3. Improved electrical stability in asymmetric fingered polysilicon thin film transistors

4. The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices

5. Suppression of Boron Penetration in PMOS by Using Oxide Gettering Effect in Poly-Si Gate

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Boron phosphorus and arsenic diffusion in MOS transistors: Simulation and analysis in 2D and 3D;Phosphorus, Sulfur, and Silicon and the Related Elements;2017-12-29

2. Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers;Crystal Research and Technology;2012-07-30

3. Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films;Japanese Journal of Applied Physics;2011-05-20

4. Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films;Japanese Journal of Applied Physics;2011-05-01

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