Interfacial structures and composition of ultramicrotomed MOCVD formed HgCdTe on GaAs
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500838908214771
Reference10 articles.
1. (100) superlattices of CdTe‐Cd0.76Mn0.24Te on (100)GaAs
2. Direct imaging of surface reconstructions on CdTe by high-resolution electron microscopy
3. Interface structure in heteroepitaxial CdTe on GaAs(100)
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of HgTe/CdTe MOCVD grown superlattice epitaxial structures on GaAs by ion beam techniques;Journal of Crystal Growth;1992-02
2. Characterization of low-temperature MOCVD Cd1−xMnxTe thin films;Applied Surface Science;1991-01
3. Interdiffusion profiles in MOCVD CdTe/HgTe superlattices and Hg1−xCdxTe multilayers;Journal of Crystal Growth;1990-12
4. Ultramicrotomy as a Technique for Materials Specimen Preparation;Proceedings, annual meeting, Electron Microscopy Society of America;1990-08-12
5. Use of MeMn(CO)5 in the low temperature MOCVD growth of Mn containing alloys;Journal of Crystal Growth;1990-04
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