Amorphization of Ge/Al or Si/Al bilayer specimens induced by 1 MeV electron irradiation at 10 K
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500838908206463
Reference15 articles.
1. Defects in electron-irradiated germanium
2. Föll, H. 1975.Lattice Defects in Semiconductors, Edited by: Huntley, F. A. 233Bristol: Institute of Physics. IOP Conference Proceedings No. 23
3. In situ study of cascade defects in silver by simultaneous transmission electron microscopy and electrical resistivity measurements at low temperatures
4. Kristallisation und entmischung amorpher aluminium-germanium-schichten
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1. Elemental process of amorphization induced by electron irradiation in Si;Physical Review B;2002-03-08
2. Effect of electron beam irradiation on the interphase boundary between crystalline Al and amorphous Al2O3;Journal of Physics: Condensed Matter;2001-08-30
3. Amorphization in Silicon by Electron Irradiation;Physical Review Letters;1999-07-12
4. In situ studies of amorphization of the GeAl and SiAl systems induced by 1 MeV electron irradiation;Journal of Alloys and Compounds;1993-05
5. Electron-irradiation-induced gold atom implantation into a silicon substrate and AES analysis of the gold-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-02
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