Enlargement of Silicon Carbide Lely Platelet by Physical Vapor Transport Technique-Reference-Cited by-同舟云学术

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Enlargement of Silicon Carbide Lely Platelet by Physical Vapor Transport Technique

Published:2013-11-02 Issue:11 Volume:28 Page:1248-1252
ISSN:1042-6914
Container-title:Materials and Manufacturing Processes
language:en
Short-container-title:Materials and Manufacturing Processes

Author:

Shi Yonggui,Yang Xinghua,Wang Dong,Zhang Peng,Zhang Jincheng,Hao Yue,Yang Jianfeng

Publisher

Informa UK Limited

Subject

Industrial and Manufacturing Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1080/10426914.2013.840911

Reference20 articles.

1. Effects of Grain Size of Source Material on Growing 6H-SiC Bulk Crystal by Physical Vapor Transport

2. Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current

3. Effect of 6H-SiC crystal growth shapes on thermo-elastic stress in the growing crystal

4. Stevanovic , L. ; Matocha , K. ; Stum , Z. ; Losee , P. ; Gowda , A.; Glaser J. ; Beaupre , R. Realizing the full potential of silicon carbide power devices. InProceedings of the Control and Modeling for Power Electronics, Boulder, CO, USA, June 28–30, 2010; Maksimovic, D. Eds., IEEE: New York, 2010.

5. Epitaxial Graphenes on Silicon Carbide

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1. Diameter enlargement of SiC bulk single crystals based on simulation and experiment;Materials Science in Semiconductor Processing;2024-08

2. Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method;Journal of Crystal Growth;2022-12

3. Tailoring of Porous Structure in Macro-Meso-Microporous SiC Ultrathin FibersviaElectrospinning Combined with Polymer-Derived Ceramics Route;Materials and Manufacturing Processes;2015-09-25

4. Synthesis of Multilayer Graphene Films on Copper by Modified Chemical Vapor Deposition;Materials and Manufacturing Processes;2014-11-17

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