Medium energy ion scattering analysis of the evolution and annealing of damage and associated dopant redistribution of ultra shallow implants in Si-Reference-Cited by-同舟云学术

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Medium energy ion scattering analysis of the evolution and annealing of damage and associated dopant redistribution of ultra shallow implants in Si

Published:2009-08 Issue:7-8 Volume:164 Page:481-491
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

van den Berg J. A.,Reading M. A.,Armour D. G.,Carter G.,Zalm P. C.,Bailey P.,Noakes T. C.Q.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420150902949944

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface-mediated suppression of radiation damage in GaN;Scripta Materialia;2012-07

2. Solid phase epitaxial regrowth of amorphous silicon is not affected by structural relaxation;Philosophical Magazine;2010-10-14

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