Surface modification of indium phosphide by 100 MeV iron ions-Reference-Cited by-同舟云学术

Surface modification of indium phosphide by 100 MeV iron ions

Published:2013-08 Issue:7-8 Volume:168 Page:557-563
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Dubey R. L.,Dubey S. K.,Yadav A. D.,Kanjilal D.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420150.2013.789027

Reference22 articles.

1. Streit, D.Compound Semiconductors, Institute of Physics Publishing Ltd, May 2002; Humphreys, B.; O'Donell, A.Compound Semiconductors, Institute of Physics Publishing Ltd, August 2003; Whitaker, T.Compound Semiconductors,Institute of Physics Publishing Ltd, January 2004.

2. Formation of discontinuous tracks in single-crystalline InP by 250-MeV Xe-ion irradiation

3. 593MeV Au irradiation of InP, GaP, GaAs and AlAs

4. Damage formation and annealing in InP due to swift heavy ions

5. Swift heavy ion irradiation of InP: Thermal spike modeling of track formation

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