The influence of radiation on the electrical characteristics of MOSFET and its revival by different annealing techniques-Reference-Cited by-同舟云学术

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The influence of radiation on the electrical characteristics of MOSFET and its revival by different annealing techniques

Published:2022-02-25 Issue:3-4 Volume:177 Page:392-400
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Pushpa N.¹^ORCID,Gnana Prakash A. P.²

Affiliation:

1. PG Department of Physics, Commerce & Science, JSS College of Arts, University of Mysore, Mysuru, India

2. Department of Studies in Physics, University of Mysore, Mysuru, India

Funder

DAE-BRNS, Government of India

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2022.2039930

Reference12 articles.

1. Charge Yield and Track Structure Effects on Total Ionizing Dose Measurements

2. A comparison of 48MeV Li3+ ion, 100MeV F8+ ion and Co-60 gamma irradiation effect on N-channel MOSFETs

3. An analysis of 175 MeV Nickel ion irradiation and annealing effects on silicon NPN rf power transistors

4. A Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An investigation of 60Co gamma radiation induced damage in N-channel MOSFETS at cryogenic temperature;Radiation Protection Dosimetry;2024-07

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