A study of hot pixels induced by proton and neutron irradiations in charge coupled devices-Reference-Cited by-同舟云学术

A study of hot pixels induced by proton and neutron irradiations in charge coupled devices

Published:2020-01-13 Issue:5-6 Volume:175 Page:540-550
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Liu Bingkai¹²³,Li Yudong¹²,Wen Lin¹²,Zhou Dong¹²,Feng Jie¹²,Ma Lindong¹²³,Zhang Xiang¹²³,Cai Yulong¹²³,Wang Zhiming¹²³,Fu Jing¹²³,Guo Qi¹²,Ma Ding⁴

Affiliation:

1. The Key Laboratory of Functional Materials and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, People’s Republic of China

2. Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, People’s Republic of China

3. The University of Chinese Academy of Sciences, Beijing, People’s Republic of China

4. The Key Laborary of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, People’s Republic of China

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2019.1701470

Reference16 articles.

1. Technical challenges and recent progress in CCD imagers

2. Analysis of CCD Dark Current Degradation in Orbit

3. Displacement damage extremes in silicon depletion regions

4. Proton-induced displacement damage distributions and extremes in silicon microvolumes charge injection device

5. Hot pixel behavior in WFC3 CCD detectors irradiated under operational conditions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Single-Event Effects Influenced by Displacement Damage Effects under Proton Irradiation in Static Random-Access Memory;Electronics;2023-12-16