120 MeV Ag ion irradiation induced intermixing, grain fragmentation in HfO2/GaOx thin films and consequent effects on the electrical properties of HfO2/GaOx/Si-based MOS capacitors-Reference-Cited by-同舟云学术

120 MeV Ag ion irradiation induced intermixing, grain fragmentation in HfO2/GaOx thin films and consequent effects on the electrical properties of HfO2/GaOx/Si-based MOS capacitors

Published:2020-01-02 Issue:1-2 Volume:175 Page:150-159
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Vinod Kumar K.¹,Arun N.²,Mangababu A.¹,Ojha Sunil³,Nageswara Rao S. V. S.¹²,Pathak A. P.¹⁴

Affiliation:

1. School of Physics, University of Hyderabad, Hyderabad, India

2. Centre for Advanced Studies in Electronics Science and Technology (CASEST), School of Physics, University of Hyderabad, Hyderabad, India

3. Inter University Accelerator Centre, New Delhi, India

4. Department of Physics, Sikkim University, Gangtok, India

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2020.1718140

Reference37 articles.

1. Superior electrical properties of crystalline Er2O3 films epitaxially grown on Si substrates

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3. Magnesium oxide as a candidate high-κ gate dielectric

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5. The importance of network structure in high-k dielectrics: LaAlO3, Pr2O3, and Ta2O5

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