Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

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Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

Published:2015-03-25 Issue:5 Volume:170 Page:377-385
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Yadav Anupama,Flitsiyan Elena,Chernyak Leonid,Hwang Ya-Hsi,Hsieh Yueh-Ling,Lei Lei,Ren Fan,Pearton Stephen J.,Lubomirsky Igor

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420150.2015.1010170

Reference19 articles.

1. Kinetics and mechanism of thermal decomposition of GaN

2. Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution Coefficients

3. Thermo-mechanical stability of wide-bandgap semiconductors: high temperature hardness of SiC, AlN, GaN, ZnO and ZnSe

4. Cohesive properties of group-III nitrides: A comparative study of all-electron and pseudopotential calculations using the generalized gradient approximation

5. Modelling of compound semiconductors: analytical bond-order potential for gallium, nitrogen and gallium nitride

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1. Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review;Microelectronics Reliability;2024-08

2. Simulation Studies of Single-Event Effects in β-Ga₂O₃ MOSFETs;IEEE Transactions on Electron Devices;2024-01

3. Radiation damage in GaN/AlGaN and SiC electronic and photonic devices;Journal of Vacuum Science & Technology B;2023-04-19

4. Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation;Applied Physics Letters;2023-01-02

5. Localized strain relaxation effect on gamma irradiated AlGaN/GaN high electron mobility transistors;Applied Physics Letters;2022-12-05

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