Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells-Reference-Cited by-同舟云学术

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Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Published:2014-09-29 Issue:10 Volume:169 Page:874-884
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Arjhangmehr Afshin,Feghhi Seyed Amir Hossein

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420150.2014.958743

Reference17 articles.

1. Anspaugh, B.E.GaAs Solar Cell Radiation Handbook; JPL Publication: California, USA, 1996; pp 96–99.

2. Displacement damage effects in mixed particle environments for shielded spacecraft CCDs

3. Radiation Effect Test for Single-Crystalline and Polycrystalline Silicon Solar Cells

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of atomic grain boundary structures on primary radiation damage in α-Fe;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-11

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