95 MeV Oxygen Ion Irradiation Effects on N-Channel Mosfets

Author:

Prakash A. P. Gnana1,Ke S. C.1,Siddappa K.2

Affiliation:

1. Department of Physics, National Dong Hwa University, Shou-Feng, Hualien-974-01, Taiwan

2. Microtron Centre, Department of Physics, Mangalore University, Mangatore-574 199, India

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Swift heavy ion irradiation and annealing studies on the I–V characteristics of N-channel depletion Metal–oxide–semiconductor field-effect transistors;Indian Journal of Physics;2015-04-28

2. An analysis of 175 MeV Nickel ion irradiation and annealing effects on silicon NPN rf power transistors;Current Applied Physics;2013-01

3. Reliability studies on NPN RF power transistors under swift heavy ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02

4. The effect of swift heavy ion irradiation on threshold voltage, transconductance and mobility of DMOSFETs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02

5. An analysis of 100MeV F8+ ion and 50MeV Li3+ ion irradiation effects on silicon NPN rf power transistors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2010-08

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