An investigation of electron and oxygen ion damage in Si npn RF power transistors-Reference-Cited by-同舟云学术

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An investigation of electron and oxygen ion damage in Si npn RF power transistors

Published:2009-10 Issue:10 Volume:164 Page:592-603
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Pushpa N.,Gnana Prakash A. P.,Praveen K. C.,Cressler John D.,Revannasiddaiah D.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420150903173288

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Innovative Leakage Stabilization System for Mitigation of Ionizing Radiation-Induced Effects;IEEE Sensors Letters;2023-06

2. Radiation Sensor Design for Mitigation of Total Ionizing Dose Effects;Lecture Notes in Electrical Engineering;2022-12-01

3. An Analysis of 30 MeV Proton Irradiation and Annealing Effects on Silicon NPN Power Transistors;Iranian Journal of Science and Technology, Transactions A: Science;2018-06-20

4. A comparison of lower and higher LET heavy ion irradiation effects on silicon NPN rf power transistors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2016-06

5. Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices;Solid State Phenomena;2015-08

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