SiC plasma characterization produced by 3 ns pulse laser at 10 <sup>10</sup> W/cm <sup>2</sup> intensity-Reference-Cited by-同舟云学术

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SiC plasma characterization produced by 3 ns pulse laser at 10 ¹⁰ W/cm ² intensity

Published:2024-07 Issue: Volume: Page:1-10
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Torrisi L.¹^ORCID,Torrisi A.²,Cutroneo M.¹³

Affiliation:

1. Dipartimento MIFT, Università di Messina, Messina, Italy

2. Facoltà di Medicina e Chirurgia, Università Kore di Enna, Enna, Italy

3. Institute of Nuclear Physics of CAS, Řež, Czech Republic

Funder

Akademie Věd České Republiky

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2024.2369122

Reference23 articles.

1. Status of Silicon Carbide (SiC) as a Wide-Bandgap Semiconductor for High-Temperature Applications: A Review;Casady J.B.;Solid-State Electron.,1996

2. High Thermal Conductivity in Wafer-Scale Cubic Silicon Carbide Crystals;Cheng Z.;Nat. Commun.,2022

3. Advanced Silicon Carbide Devices and Processing

4. Azo Materials Silicon Carbide (SiC) Properties and Applications actual website 2023: Properties: Silicon Carbide (SiC) Properties and Applications (azom.com)

5. Power Device Breakdown Mechanism and Characterization: Review and Perspective;Zhang R.;Jpn. J. Appl. Phys.,2023

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of laser interaction on morphological and mechanical properties of palladium thin film;Radiation Effects and Defects in Solids;2024-09-03

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