Measurement of temperature-dependent linewidth enhancement factor in a 1550 nm VCSEL
Author:
Affiliation:
1. Department of Electronics, University of Peshawar, Peshawar, Pakistan
2. Department of Computer Science and Electronics Engineering, University of Essex, Essex, UK
3. Department of Electronics, Quaid-i-Azam University, Islamabad, Pakistan
Publisher
Informa UK Limited
Subject
Atomic and Molecular Physics, and Optics
Link
https://www.tandfonline.com/doi/pdf/10.1080/09500340.2020.1845406
Reference18 articles.
1. Linewidth broadening factor in semiconductor lasers--An overview
2. Linewidth of InP-based 1.55 [micro sign]m VCSELs with buried tunnel junction
3. Chirp and linewidth enhancement factor of 1.55 [micro sign]m VCSEL with buried tunnel junction
4. Measurement of differential gain and linewidth enhancement factor of InGaAs vertical cavity surface emitting laser
5. Measurement of the linewidth enhancement factor in DFB lasers using a high-resolution optical spectrum analyzer
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1. Emission Linewidth and α-Factor of 1.55 μm-Range Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/InGaAlAs Quantum Wells;Optics and Spectroscopy;2024-02
2. Ultra-narrow linewidth characteristics of 795-nm subwavelength grating-coupled cavity vertical cavity surface emitting laser;Acta Physica Sinica;2021
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