Persistent photocurrents in semi-insulating gallium arsenide
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
http://www.tandfonline.com/doi/pdf/10.1080/10420158908212984
Reference14 articles.
1. Optical properties of EL2
2. Photo response of the EL2 absorption band and of the As+Ga ESR signal in GaAs
3. Hall-Effect Analysis of Persistent Photocurrents inn-GaAs Layers
4. Long lifetime photoconductivity in semi-insulating bulk GaAs
5. Nonexponential Relaxation of Conductance near Semiconductor Interfaces
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Study of Annealing Behavior of EL2 and EL6 Groups in SI-GaAs;MRS Proceedings;1996
2. Trapping and recombination processes via deep level T3 in semi-insulating gallium arsenide;Journal of Electronic Materials;1993-04
3. Donor-Acceptor Pair as Opposed to Anion Antisite Metastability in Bulk Semi-Insulating GaAs: Electron Paramagnetic Resonance and Photoconductivity Data Analysis;Japanese Journal of Applied Physics;1992-09-15
4. Characterization of deep traps in semi-insulating gallium arsenide;Journal of Electronic Materials;1992-04
5. EL2 related deep traps in semi‐insulating GaAs;Applied Physics Letters;1991-01-21
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