Hydrostatic pressure effects on oxygen-related irradiation-produced defects in silicon-Reference-Cited by-同舟云学术

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Hydrostatic pressure effects on oxygen-related irradiation-produced defects in silicon

Published:1989-12 Issue:1-2 Volume:111-112 Page:411-423
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Stein H. J.,Samara G. A.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420158908213015

Reference24 articles.

1. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter

2. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter

3. OXYGEN‐DEFECT COMPLEXES IN GERMANIUM

4. Investigations of Oxygen-Defect Interactions between 25 and 700°K in Irradiated Germanium

5. Newman, R. C. Thirteenth Internatl. Conf. on Defects in Semiconductors. Edited by: Kimerling, L. C. and Parsey, J. M. Jr. pp.87Warrendale, PA: The Metall. Soc. of AIME.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Infrared spectroscopy studies of localized vibrations in neutron irradiated silicon;Journal of Materials Science: Materials in Electronics;2019-07-24

2. Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon;Journal of Applied Physics;2010-05

3. Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon;Solid State Phenomena;2003-09

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