Plasma etching for carbon materials by inward RF plasma apparatus-Reference-Cited by-同舟云学术

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Plasma etching for carbon materials by inward RF plasma apparatus

Published:2022-05-05 Issue:4 Volume:100 Page:185-188
ISSN:0020-2967
Container-title:Transactions of the IMF
language:en
Short-container-title:Transactions of the IMF

Author:

Kameshima T.¹²^ORCID,Sakamoto Y.³

Affiliation:

1. Department of Technical Development, Ogura Jewel Industry Co., Ltd., Tokyo, Japan

2. Graduate School, Chiba Institute of Technology, Chiba, Japan

3. Department of Advanced Material Science and Engineering, Faculty of Engineering, Chiba Institute of Technology, Chiba, Japan

Publisher

Informa UK Limited

Subject

Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/00202967.2022.2058288

Reference12 articles.

1. Vapor Deposition of Diamond Particles from Methane

2. Large area deposition of 〈100〉-textured diamond films by a 60-kW microwave plasma CVD reactor

3. Deposition uniformity of ultra nano crystalline diamond on 6" and 8" wafer substrates using a 915MHz plasma assisted CVD diamond reactor

4. Reactive ion etching of diamond

5. S. Shikata, Y. Nishibayashi, T. Tomikawa, N. Toda and N. Fujimori. ‘Microfabrication technique for diamond device.’ Proceedings of the 2nd International conference. on the applications of diamond films and related materials; (ed. A. Feldman, Y. Tzeng, M. Yoshikawa, M. Murakawa), 377–380; August 1993, MYU, Tokyo, Japan; Elsevier, USA.

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