Multi-Step Resistance Memory Behavior in Ge2Sb2Te5/GeTe Stacked Chalcogenide Films-Reference-Cited by-同舟云学术

Multi-Step Resistance Memory Behavior in Ge2Sb2Te5/GeTe Stacked Chalcogenide Films

Published:2012-01 Issue:1 Volume:140 Page:8-15
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Hu Yifeng¹²,Sun Mingcheng¹,Song Sannian³,Song Zhitang³,Zhai Jiwei¹

Affiliation:

1. a Functional Materials Research Laboratory, Tongji University , Shanghai , 200092 , China

2. c School of Mathematics and Physics, Jiangsu Teachers University of Technology , Changzhou , 213001 , China

3. b State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences , Shanghai , 200050 , China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2012.741367

Reference19 articles.

1. Te-based chalcogenide films with high thermal stability for phase change memory

2. Phase change materials in non-volatile storage

3. Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5

4. Size Effect of Nano Scale Phase Change Random Access Memory

5. A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell

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