Influence of Source and Drain Electrodes on Device Performance of ZnO Thin Film Transistors-Reference-Cited by-同舟云学术

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Influence of Source and Drain Electrodes on Device Performance of ZnO Thin Film Transistors

Published:2013-01 Issue:1 Volume:142 Page:73-78
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Dong Ming¹,Wang Hao²,Li Zhixiong²,Zhang Jieqiong²,Ye Cong²,Wang Baoyuan²,Zhang Jun²

Affiliation:

1. a State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering , Xi'an Jiaotong University , Xi'an , Shanxi , 710049 , China

2. b Faculty of Physics and Electronic Technology , Hubei University , Wuhan , 430062 , China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2013.780404

Reference20 articles.

1. High-transconductance graphene solution-gated field effect transistors

2. ZnO-based transparent thin-film transistors

3. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

4. Scaling behavior of ZnO transparent thin-film transistors

5. High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition

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