An interface charge model for ferroelectric field effect transistor-Reference-Cited by-同舟云学术

An interface charge model for ferroelectric field effect transistor

Published:2016-11-21 Issue:1 Volume:176 Page:54-62
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Xiao Y. G.¹²,Wang J.¹²,Ma D. B.¹²,Tang M. H.¹²,Li Z.¹²

Affiliation:

1. Hunan Provincial Key Laboratory of Key Film Materials & Application for Equipments, School of Material Sciences and Engineering, Xiangtan University, Xiangtan, Hunan, China

2. Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University, Xiangtan, Hunan, China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2016.1248746

Reference22 articles.

1. Ferroelectric Memories

2. Fabrication and Properties of $\hbox{Pt}/\hbox{Bi}_{3.15}\hbox{Nd}_{0.85} \hbox{Ti}_{3}\hbox{O}_{12}/\break\hbox{HfO}_{2}/\hbox{Si}$ Structure for Ferroelectric DRAM (FEDRAM) FET

3. A Retention Model for Ferroelectric-Gate Field-Effect Transistor

4. Depolarization fields in thin ferroelectric films

5. Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

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