Structure and Properties of the Copper Nitride Films Doped with Ti-Reference-Cited by-同舟云学术

Structure and Properties of the Copper Nitride Films Doped with Ti

Published:2012-01 Issue:1 Volume:135 Page:8-16
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Xiao Jianrong¹²,Shao Hongjuan¹,Li Yanwei³,Zhou Changrong²

Affiliation:

1. a College of Science , Guilin University of Technology , Guilin , 541004 , China

2. b Guangxi Key Laboratory of Information Materials , Guilin University of Electronic Technology , Guilin , 541004 , China

3. c College of Chemistry and Bioengineering , Guilin University of Technology , Guilin , 541004 , China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2012.685354

Reference28 articles.

1. Structure, Optical Property and Thermal Stability of Copper Nitride Films Prepared by Reactive Radio Frequency Magnetron Sputtering

2. The adsorption of atomic N and the growth of copper nitrides on Cu(100)

3. Copper nitride and tin nitride thin films for write‐once optical recording media

4. Electronic and atomic structure modifications of copper nitride films by ion impact and phase separation

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