Influence of Aliovalent Doping on Dielectric Properties of Ba0.6Sr0.4TiO3Thin Film for Voltage Tunable Applications-Reference-Cited by-同舟云学术

Influence of Aliovalent Doping on Dielectric Properties of Ba0.6Sr0.4TiO3Thin Film for Voltage Tunable Applications

Published:2015-11-22 Issue:1 Volume:167 Page:184-191
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Upadhyay R. B.,Annam Sriranganath,Patel M. R.,Joshi U. S.

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/10584587.2015.1107436

Reference10 articles.

1. Microwave integrated circuits using thin-film BST

2. Dielectric Properties of Paraelectric Ba1-xSrxTiO3Ceramics

3. Progress of (Sr, Ba) TiO3 ferroelectric thin film and tunability

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