Fabrication and Characterization of Bismuth Lanthanum Titanate (Bi3.25La0.75Ti3O12) Thin Films for FeRAM Devices-Reference-Cited by-同舟云学术

Fabrication and Characterization of Bismuth Lanthanum Titanate (Bi3.25La0.75Ti3O12) Thin Films for FeRAM Devices

Published:2010-11-12 Issue:1 Volume:122 Page:63-73
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Gautam Prikshit¹,Bhattacharyya S.²,Singh Sushil K.³,Tandon R. P.¹

Affiliation:

1. a Department of Physics and Astrophysics , University of Delhi , Delhi, 110007, India

2. b Electroceramics Group , Solid State Physics Laboratory , Lucknow Road, Timarpur, New Delhi, 110054, India

3. c MEMS Group , Solid State Physics Laboratory , Lucknow Road, Timarpur, New Delhi, 110054, India

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2010.492288

Reference34 articles.

1. Ferroelectric Memories

2. Ferroelectricity inBi4Ti3O12and Its Solid Solutions

3. Lanthanum-substituted bismuth titanate for use in non-volatile memories

4. Leakage current behavior of Bi3.25La0.75Ti3O12 ferroelectric thin films deposited on different bottom electrodes

5. Ferroelectric properties of sol-gel prepared La- and Nd-substituted, and Nb-co-substituted bismuth titanate using polymeric additives

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applications;AIP Advances;2015-08

2. A comparative study regarding effects of interfacial ferroelectric Bi4Ti3O12 (BTO) layer on electrical characteristics of Au/n-Si structures;Bulletin of Materials Science;2014-04

3. Effect of zirconium doping on ferroelectric properties and leakage-current mechanism in Bi3.25 La0.75 Ti3 O12 (BLT) thin films;physica status solidi (b);2010-10-07