Refining of Nanopillars Induced by Mn-doping in Epitaxial Ba(Zr,Ti)O3 Thin Films-Reference-Cited by-同舟云学术

Refining of Nanopillars Induced by Mn-doping in Epitaxial Ba(Zr,Ti)O3 Thin Films

Published:2011-01 Issue:1 Volume:131 Page:72-81
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

He J.¹,Jiang J. C.¹,Meletis E. I.¹,Liu M.²,Collins G.²,Ma C. R.²,Chen C. L.²,Bhalla A.³

Affiliation:

1. a Department of Materials Science and Engineering , University of Texas at Arlington , Arlington , TX , 76019 , USA

2. b Department of Physics and Astronomy , University of Texas at San Antonio , San Antonio , TX , 78249 , USA

3. c Department of Electrical & Computer Engineering , University of Texas at San Antonio , San Antonio , TX , 78249 , USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2011.621054

Reference29 articles.

1. Dielectric Properties of Ba(Zr,Ti)O3-Based Ferroelectrics for Capacitor Applications

2. Relaxor behavior in sol–gel-derived BaZr(0.40)Ti(0.60)O3 thin films

3. Dielectric nonlinear characteristics of Ba(Zr0.35Ti0.65)O3 thin films grown by a sol-gel process

4. Structural and dielectric properties of Ba(ZrxTi1 x)O3thin films prepared by the sol–gel process

5. Electric field dependent dielectric properties and high tunability of BaZrxTi1−xO3 relaxor ferroelectrics

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