Identification of the Occupation Site of Dy- or Y-Substituted PZT Films and the Correlation Between Occupation Site and Ferroelectric Property-Reference-Cited by-同舟云学术

Identification of the Occupation Site of Dy- or Y-Substituted PZT Films and the Correlation Between Occupation Site and Ferroelectric Property

Published:2013-01 Issue:1 Volume:141 Page:1-8
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Nishida Ken¹,Osada Minoru²,Uchida Hiroshi³,Nakaki Hiroshi⁴,Funakubo Hiroshi⁴,Shima Hiromi¹,Nishide Masamichi¹,Tai Takeshi¹,Woonhg Kim Jin¹,Matsuoka Masashi¹,Katoda Takashi⁵,Yamamoto Takashi¹

Affiliation:

1. a Department of Communications Engineering , National Defense Academy , Yokosuka , Kanagawa , 239-8686 , Japan

2. b International Center for Materials Nanoarchitectonics , National Institute for Materials Science , Tsukuba , Ibaraki , 305-0044 , Japan

3. c Department of Chemistry , Sophia University , 7-1 Kioi-cho, Chiyoda-ku , Tokyo , 102-8554 , Japan

4. d Department of Innovative and Engineered Materials , Tokyo Institute of Technology , J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama , Kanagawa , 226-8502 , Japan

5. e Department of Electronic and Photonic Systems Engineering , Kochi University of Technology, 185 Miyanokuchi Tosayamada-cho , Kochi , 782-8502 , Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2013.772012

Reference18 articles.

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2. The Physics of Ferroelectric Memories

3. Lanthanum-substituted bismuth titanate for use in non-volatile memories

4. Fabrication of M3+-Substituted and M3+/V5+-Cosubstituted Bismuth Titanate Thin Films [M=lanthanoid] by Chemical Solution Deposition Technique

5. Hot-Pressed (Pb,La)(Zr,Ti)O3Ferroelectric Ceramics for Electrooptic Applications

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